저온동시소성 세라믹 기판 및 그 제조 방법

Low temperature co-fired ceramics and method of manufacturing the same

Abstract

이종 접합영역에서 열팽창률 차이에 의한 크랙(crack) 발생을 방지하는 버퍼층을 구비한 저온동시소성 세라믹 기판 및 그 제조 방법에 관한 것이다. 본 발명에 따른 저온동시소성 세라믹 기판은, 제 1 열팽창계수를 갖는 물질로 이루어진 제 1 세라믹층; 상기 제 1 열팽창계수보다 높은 제 2 열팽창계수를 갖는 물질로 이루어진 제 2 세라믹층; 및 상기 제 1 세라믹층과 제2 세라믹층 사이에 개재되고, 다수의 관통 충진 영역으로 형성된 제 2 영역을 포함하는 제 1 영역의 층으로 형성된 버퍼층을 포함하고, 상기 제 1 세라믹층과 제2 세라믹층의 열팽창 차이에 의한 결함을 상기 버퍼층에 의해 방지할 수 있다.
A low temperature co-fired ceramic substrate and a manufacturing method thereof are provided to prevent a crack generation in a hetero-junction between ceramic layers having different coefficient of thermal expansion by including a buffer layer. A low temperature co-fired ceramic substrate(100) comprises a firs ceramic layer(111), a second ceramic layer(112), and a buffer layer(110). The first ceramic layer is made of material having a first coefficient of thermal expansion. The second ceramic layer is made of material having a second coefficient of thermal expansion higher than the first coefficient of thermal expansion. The buffer layer is positioned between the first ceramic layer and the second ceramic layer, and includes a first region(111') and a second region(112'). The first region is made of material such as the first ceramic layer. The second region is made of material such as the second ceramic layer, and has a plurality of through hole filling regions. The buffer layer prevents a defect due to the coefficient of thermal expansion between the first ceramic layer and the second ceramic layer.

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    WO-2017096167-A1June 08, 2017Multek Technologies LimitedPcb hybrid redistribution layer